| PART |
Description |
Maker |
| UT9Q512 |
512K words by 8 bits high-performance CMOS asynchronous static RAM. 25ns acces time. 3V and 5V.
|
Aeroflex Circuit Technology
|
| EDS6416AHBH-75-E EDS6416CHBH-75-E |
64M bits SDRAM (4M words x 16 bits) 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
64M bits SDRAM (4M words x 16 bits) 6400位的SDRAM4分字× 16位）
|
Elpida Memory, Inc.
|
| CAT93C56VE-1.8-GT3E CAT93C56ZD4E-1.8-GT2E CAT93C56 |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
|
ON Semiconductor
Emulation Technology, Inc.
Electronic Theatre Controls, Inc.
HIROSE ELECTRIC Co., Ltd.
Xiamen Hongfa Electroacoustic Co., Ltd.
ITT, Corp.
|
| LC35V1000BTS-70U LC35V1000BM LC35V1000BM-70U LC35V |
Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM
Static RAMs (1Mb)
Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM
|
SANYO[Sanyo Semicon Device]
|
| CAT24FC02ZITE13REV-F CAT24FC02 CAT24FC02GLETE13REV |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
CAP 0.22UF 25V 80-20% Y5V SMD-0805 TR-7 PLATED-NI/SN
RELAY, DPDT, 4.5V, SMD
SWITCH 4 POS DIP
LM5100A/B/C LM5101A/B/C 3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers; Package: LLP; No of Pins: 10
IC EXTRACTOR TOOL
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
|
CATALYST[Catalyst Semiconductor]
Pulse Research Lab
|
| CAT28LV64GI-20T CAT28LV64GI-15T CAT28LV64GA-20T CA |
DC-DC Converter, 2Watt, Input VDC: 5, Output VDC: 15, Max Output Current(A): 0.133, Package: SIP4, Isolation(VDC): 1000, Operating Temp. -40C to 85C, Low Ripple & Noise, High Efficiency up to 85%, Low Profile Plastic Case, Single Output
64K-Bit CMOS PARALLEL EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
8K X 8 EEPROM 3V, 200 ns, PDIP28
64K-Bit CMOS PARALLEL EEPROM
|
http://
EEPROM
Abracon, Corp.
Coilcraft, Inc.
Vishay Intertechnology, Inc.
Vicor, Corp.
Catalyst Semiconductor
|
| ID8155 8156H P8155 P8156 8155H D8156 D8155H-2B ID8 |
2048-Bit Static MOS RAM with I/O Ports and Timer
2048-Bit Static MOS RAM with I/O Ports and Timer 22 I/O, PIA-GENERAL PURPOSE, CDIP40
RESISTOR CER .30 OHM 3W RADIAL 2048位静态马鞍山内存与I / O端口和定时器
(ID8155 / ID8156) 2048-Bit Static MOS RAM with I/O Ports and Timer
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
|
| EDS2532AABJ-6B-E EDS2532AABJ-6BL-E |
256M bits SDRAM (8M words 32 bits) 256M位的SDRAM00万字32位）
256M bits SDRAM (8M words ?32 bits)
|
Elpida Memory, Inc.
|
| X28HC256P12 |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
|
Hoffman
|
| EDS2532JEBH-75-E |
256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
|
Elpida Memory, Inc.
|
| EDX5116ABSE-4C-E EDX5116ABSE EDX5116ABSE-2A-E EDX5 |
512M bits XDR DRAM (32M words x16 bits)
|
ELPIDA[Elpida Memory]
|
| EDD2504AKTA-7B EDD2504AKTA-6B |
256M bits DDR SDRAM (64M words x 4 bits)
|
Elpida Memory, Inc.
|
